Fracture behaviour of reaction-bonded silicon carbide-boron carbide using digital image correlation
The study investigates the fracture behavior of Reaction-Bonded Silicon Carbide-Boron Carbide (RBSBC) ceramics using the Digital Image Correlation (DIC) method. A Photron NOVA S Series camera, capturing at 137,500 frames per second, was crucial in documenting the rapid crack propagation and brittle behavior characteristic of these ceramics. Proper lighting setup was essential to ensure high-quality image capture and accurate data.
RBSBC exhibited transgranular failure, with randomly dispersed coarse B4C grains deflecting the crack path and increasing the overall crack length. The material’s resistance to crack propagation was evaluated using Crack Tip Opening Displacement (CTOD), stress intensity at the crack tip, and the J-integral.
Two methodologies were used: one based on experimental DIC-derived displacement metrics and another on a quasistatic assessment of fracture load and crack geometry. The experimental method provided more accurate resistance values, while the quasistatic approach tended to underestimate resistance.
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